Atomic layer deposition of Cu(i) oxide films using Cu(ii) bis(dimethylamino-2-propoxide) and water.

نویسندگان

  • J R Avila
  • A W Peters
  • Zhanyong Li
  • M A Ortuño
  • A B F Martinson
  • C J Cramer
  • J T Hupp
  • O K Farha
چکیده

To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(ii), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

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عنوان ژورنال:
  • Dalton transactions

دوره 46 18  شماره 

صفحات  -

تاریخ انتشار 2017